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Novel Vertical Interconnects With 180 Degree Phase Shift for Amplifiers, Filters, and Integrated Antennas

机译:具有180度相移的新型垂直互连,用于放大器,滤波器和集成天线

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摘要

In this paper, novel low loss, wide-band coplanar stripline technology for RF/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semiconductor devices and microelectromechanical systems (MEMS).
机译:本文在高电阻率硅晶片上展示了用于射频/微波集成电路的新型低损耗,宽带共面带状线技术。尤其以图形方式说明了旋涂玻璃(SOG)沉积作为介电层的制造工艺,垂直互连的微通孔蚀刻,多端口电路的设计方法及其测量/模拟特性。研究表明,使用这种技术,具有极低损耗,大带宽和紧凑尺寸的电路是可行的。与半导体器件和微机电系统(MEMS)结合使用时,这种多层平面技术具有显着提高RF /微波IC性能的潜力。

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